Vertical tunnel diodes on high resistivity siliconYAN YAN; JIALIN ZHAO; QINGMIN LIU et al.DRC : Device research conference. 2004, pp 27-28, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Manufacturability of heterojunction tunnel devices : further progressBILLEN, K; WILKINSON, V. A; KELLY, M. J et al.Semiconductor science and technology. 1997, Vol 12, Num 7, pp 894-898, issn 0268-1242Article

Correlation of electronic and structural data for a superlattice tunnel diodeDAVIES, R. A; BITHELL, E. G; CHEW, A et al.Semiconductor science and technology. 1989, Vol 4, Num I, pp 35-40, issn 0268-1242Article

Features of a tunnel diode oscillator at different temperaturesAL-HARTHI, S; SELLAI, A.Microelectronics journal. 2007, Vol 38, Num 8-9, pp 817-822, issn 0959-8324, 6 p.Article

Bohm trajectories and their potential use for the Monte Carlo simulation of resonant tunnelling diodesSUNE, J; ORIOLS, X; MARTIN, F et al.Applied surface science. 1996, Vol 102, pp 255-258, issn 0169-4332Conference Paper

Microwave tunnel diodes are not yet manufacturableWILKINSON, V. A; KELLY, M. J.Superlattices and microstructures. 1998, Vol 24, Num 4, pp 309-312, issn 0749-6036Article

GENERATEUR D'IMPULSIONSVAKHRIN MI.1979; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1979; NO 4; PP. 161-162; BIBL. 4 REF.Article

Synchronization of the tunnel-diode generators of chaotic oscillationsMARKOV, A. Yu; SIMIN, G. S; FRADKOV, A. L et al.Journal of communications technology & electronics. 1997, Vol 42, Num 12, pp 1379-1384, issn 1064-2269Article

Four logic states using two resonant tunnelling diodesVAN HOOF, C; GENOE, J; VAN HOVE, M et al.Electronics Letters. 1989, Vol 25, Num 4, pp 259-260, issn 0013-5194, 2 p.Article

Circuit simulation of resonant tunneling double-barrier diodeLIU, H. C.Journal of applied physics. 1988, Vol 64, Num 9, pp 4792-4794, issn 0021-8979Article

Tunnel diode theoryLANDSBERG, P. T; ABRAHAMS, M. S.Electronics Letters. 1985, Vol 21, Num 2, pp 59-60, issn 0013-5194Article

DARK-CAPACITANCE TRANSIENTS IN MIS TUNNEL DIODESDAHLKE WE; SHIMER JA.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 465-472; BIBL. 7 REF.Article

Influence of scattering on the I-V characteristics of double-barrier resonant-tunneling diodesVAN DE ROER, T. G; KWASPEN, J. J. M; JOOSTEN, H et al.Physica. B, Condensed matter. 1991, Vol 175, Num 1-3, pp 301-306, issn 0921-4526Conference Paper

DISCOVERY OF THE TUNNEL DIODE.ESAKI L.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 644-647; BIBL. 9 REF.Article

Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on Si_0.8Ge_0.2 Virtual Substrates With Strained Si Cladding LayersNIU JIN; RONGHUA YU; CHUNG, Sung-Yong et al.IEEE electron device letters. 2008, Vol 29, Num 6, pp 599-602, issn 0741-3106, 4 p.Article

Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopyGUISINGER, N. P; BASU, R; GREENE, M. E et al.DRC : Device research conference. 2004, pp 195-197, isbn 0-7803-8284-6, 1Vol, 3 p.Conference Paper

Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equationMAINS, R. K; HADDAD, G. I.Journal of applied physics. 1988, Vol 64, Num 7, pp 3564-3569, issn 0021-8979Article

Fractal dimension at chaos of a quasiperiodic driven tunnel diodeTESTA, J.Physics letters. A. 1985, Vol 111, Num 5, pp 243-245, issn 0375-9601Article

Transmission coefficient and tunneling relaxation time in MIS tunnel diodesSHIMER, J. A; DAHLKE, W. E.Solid-state electronics. 1983, Vol 26, Num 11, issn 0038-1101, 1129Article

A Proposal of High-Performance Samplers Based on Resonan Tunneling DiodesMAEZAWA, Koichi; JIE PAN; DONGPO WU et al.IEICE transactions on electronics. 2012, Vol 95, Num 11, pp 1830-1833, issn 0916-8524, 4 p.Article

Microwave radiation control of semiconductor structures with tunnel-thin P-N-transitionsUSANOV, D. A; SKRIPAL, A. V.International conference on microelectronic. 1997, pp 249-251, isbn 0-7803-3664-X, 2VolConference Paper

PROBLEMY APROKSYMACJI CHARACKTERYSTYK PRADOWO- NAPIECIOWYCH DIOD TUNELOWYCH = PROBLEMES D'APPROXIMATION DES CARACTERISTIQUES DES DIODES TUNNELSMOESCHKE B; STABROWSKI M.1978; ROZPR. ELEKTROTECH.; POL; DA. 1978; VOL. 34; NO 2; PP. 315-332; ABS. ENG/FRE/GER/RUS; BIBL. 10 REF.Article

SENSIBILITE DE PHASE DES GENERATEURS SYNCHRONISESTAMARCHAK D YA; KHOTUNTSEV YU L.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 7; PP. 64-70; BIBL. 3 REF.Article

50 GHz resonant tunneling diode relaxation oscillatorCHAHAL, Prem; MORRIS, Frank; FRAZIER, Gary et al.DRC : Device research conference. 2004, pp 241-242, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Observation of intrinsic bistability in resonant tunneling diode modelingMAINS, R. K; SUN, J. P; HADDAD, G. I et al.Applied physics letters. 1989, Vol 55, Num 4, pp 371-373, issn 0003-6951, 3 p.Article